Sascha Breun
M. Sc. Sascha Breun, M. Sc.
Akademischer Rat und Gruppenleiter
Cauerstraße 9
91058 Erlangen
FAU Erlangen-Nürnberg
Lehrstuhl für Intelligente Technische Elektronik und Systeme
Cauerstraße 9
91058 Erlangen
- Telefon: +49 9131 85-27193
- Faxnummer: +49 9131 85-28730
- E-Mail: sascha.breun@fau.de
- Webseite: https://lites.tf.fau.de
Lebenslauf
Sascha Breun erwarb 2018 den M.Sc. in Electronic Engineering (EEI) an der Friedrich-Alexander-Universität Erlangen-Nürnberg. Seit Juli 2018 ist er als wissenschaftlicher Mitarbeiter am LTE, Friedrich-Alexander-Universität Erlangen-Nürnberg tätig. Seine Forschungsinteressen umfassen den Entwurf integrierter HF-Schaltungen und -Systeme.
Publikationen
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A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS Technology
Latin America Microwave Conference (LAMC 2025) (San Juan, 22. Januar 2025 - 24. Januar 2025)
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A J- and D-Band Dual-Band Receiver for FMCW Radar and RadCom in a SiGe Technology
IEEE MTT-S Latin America Microwave Conference (LAMC2025) (San Juan, 22. Januar 2025 - 24. Januar 2025)
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A 296-336 GHz 2 dBm Pmax Frequency Octupler Using Bootstrapped and Push-Push Topology in 90 nm SiGe BiCMOS Technology
2024 Asia-Pacific Microwave Conference (APMC2024) (Bali, 17. November 2024 - 20. November 2024)
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A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology
2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024 (Clearwater, FL, 15. April 2024 - 16. April 2024)
In: 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024 2024
DOI: 10.1109/WAMICON60123.2024.10522867
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A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology
Radio Wireless Week (San Antonio, 21. Januar 2024 - 24. Januar 2024)
DOI: 10.1109/SiRF59913.2024.10438562
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Timed array architectures and integrated true-time delay elements for wideband millimeter-wave antenna arrays
In: International Journal of Microwave and Wireless Technologies (2024)
ISSN: 1759-0787
DOI: 10.1017/S1759078724001053
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Broadband 110 GHz Multiport Scalar Network Analysis Methodology Using Port Extension Across Multiple VNAs
2024 IEEE Asia-Pacific Microwave Conference (APMC)
DOI: 10.1109/APMC60911.2024.10867595
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High-Frequency Multiport Vector Network Analysis Methodology Using Port Extension Across Multiple VNAs
54th European Microwave Conference, EuMC 2024 (Paris, 24. September 2024 - 26. September 2024)
In: 2024 54th European Microwave Conference (EuMC) 2024
DOI: 10.23919/EuMC61614.2024.10732150
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Broadband Low-Loss Fan-In Chip-to-Package Interconnect Enabling System-in-Package Applications Beyond 220 GHz
In: IEEE Transactions on Components, Packaging and Manufacturing Technology (2024), S. 1-1
ISSN: 2156-3985
DOI: 10.1109/TCPMT.2024.3386959
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A Digitally Controlled D-Band Phase Shifter for FMCW Radar and RadCom in SiGe BiCMOS
2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024 (Clearwater, FL, 15. April 2024 - 16. April 2024)
In: 2024 IEEE Wireless and Microwave Technology Conference, WAMICON 2024 2024
DOI: 10.1109/WAMICON60123.2024.10522809
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A Continuously Adjustable True Time Delay for D-Band Timed Antenna Arrays
18th European Microwave Integrated Circuits Conference (EuMIC) (Berlin, 18. September 2023 - 19. September 2023)
In: 2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023 2023
DOI: 10.23919/EuMIC58042.2023.10288681
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A 295-337 GHz 2.5 dBm Psat Cascode-Based Frequency Doubler in SiGe BiCMOS Technology
2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (Las Vegas, 16. Januar 2022 - 20. Januar 2022)
DOI: 10.1109/SiRF53094.2022.9720049
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A 268-325 GHz 5.2 dBm Psat Frequency Doubler using Transformer-Based Mode Separation in SiGe BiCMOS Technology
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (, 6. Dezember 2021 - 9. Dezember 2021)
DOI: 10.1109/BCICTS50416.2021.9682474
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A 220-325 GHz Subharmonic Receiver with 14.8 dB Peak Conversion Gain for FMCW Radar in SiGe BiCMOS Technology
IEEE Radio & Wireless Week (Las Vegas, 16. Januar 2022 - 19. Januar 2022)
DOI: 10.1109/sirf53094.2022.9720057
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A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology
IEEE Radio & Wireless Week (Virtual Conference, 18. Januar 2021 - 22. Januar 2021)
DOI: 10.1109/sirf51851.2021.9383328
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Extended Equivalent Circuit Model for Enhanced Substrate Modeling of Three-Port Inductors
RWW 2020 (, 26. Januar 2020 - 29. Januar 2020)
DOI: 10.1109/sirf46766.2020.9040195
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A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT
RWW 2020 (, 26. Januar 2020 - 29. Januar 2020)
DOI: 10.1109/sirf46766.2020.9040174
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Analytical Equivalent Circuit Extraction Procedure for Broadband Scalable Modeling of Three-Port Center-Tapped Symmetric On-Chip Inductors
In: IEEE Transactions on Circuits and Systems I-Regular Papers 66 (2019), S. 3557-3570
ISSN: 1549-8328
DOI: 10.1109/TCSI.2019.2926737
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A Highly Linear and Efficient 28 GHz Stacked Power Amplifier for 5G using Analog Predistortion in a 130nm BiCMOS Process
IEEE Asia-Pacific Microwave Conference (APMC) (Singapore, 10. Dezember 2019 - 13. Dezember 2019)
In: PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), NEW YORK: 2019
DOI: 10.1109/apmc46564.2019.9038828
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Design of an Integrated Subretinal Implant Using Cellular Neural Networks for Binary Image Generation in a 130 nm BiCMOS Process
IEEE Engineering in Medicine and Biology Conference (EMBC) (Berlin, 23. Juli 2019 - 27. Juli 2019)
DOI: 10.1109/embc.2019.8856941
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Design Methodology for Automatically Designed, Integrated Marchand Baluns with Low Insertion Loss at Lowest Phase Imbalance
APMC (Asia-Pacific Microwave Conference) (Singapur, 10. Dezember 2019 - 13. Dezember 2019)
DOI: 10.1109/APMC46564.2019.9038425
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A Signal Source Chip at 140 GHz and 160 GHz for Radar Applications in a SiGe Bipolar Technology
MWSCAS (Dallas, 4. August 2019 - 7. August 2019)
DOI: 10.1109/mwscas.2019.8885171
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